Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM
نویسندگان
چکیده
Work function measurements on cross sectioned microcrystalline pin silicon solar cells deposited by Hot−Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built−in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p−silicon layer and the n−type transparent conducting oxide form a reverse polarized diode in series with the pin diode.
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